Few electron limit of n-type metal oxide semiconductor single electron transistors

dc.contributor.author	Kotekar-Patil, Dharmraj
dc.contributor.author	Ruoff, Matthias
dc.contributor.author	Kern, Dieter P.
dc.contributor.author	Wharam, David A.
dc.date.accessioned	2014-03-18T13:47:48Z
dc.date.available	2014-03-18T13:47:48Z
dc.date.issued	2012
dc.identifier.issn	0957-4484
dc.identifier.uri	http://hdl.handle.net/10900/50139
dc.language.iso	en	de_DE
dc.publisher	Iop Publishing Ltd	de_DE
dc.relation.uri	http://dx.doi.org/10.1088/0957-4484/23/21/215204	de_DE
dc.rights	info:eu-repo/semantics/closedAccess
dc.subject.ddc	530	de_DE
dc.subject.ddc	600	de_DE
dc.title	Few electron limit of n-type metal oxide semiconductor single electron transistors	de_DE
dc.type	Article	de_DE
utue.quellen.id	20140226071329_02277	de_DE
utue.personen.roh	Prati, Enrico
utue.personen.roh	De Michielis, Marco
utue.personen.roh	Belli, Matteo
utue.personen.roh	Cocco, Simone
utue.personen.roh	Fanciulli, Marco
utue.personen.roh	Kotekar-Patil, Dharmraj
utue.personen.roh	Ruoff, Matthias
utue.personen.roh	Kern, Dieter P.
utue.personen.roh	Wharam, David A.
utue.personen.roh	Verduijn, Jan
utue.personen.roh	Tettamanzi, Giuseppe C.
utue.personen.roh	Rogge, Sven
utue.personen.roh	Roche, Benoit
utue.personen.roh	Wacquez, Romain
utue.personen.roh	Jehl, Xavier
utue.personen.roh	Vinet, Maud
utue.personen.roh	Sanquer, Marc
dcterms.isPartOf.ZSTitelID	Nanotechnology	de_DE
dcterms.isPartOf.ZS-Issue	Article 215204	de_DE
dcterms.isPartOf.ZS-Volume	23	de_DE
utue.fakultaet	07 Mathematisch-Naturwissenschaftliche Fakultät	de_DE